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Optical temperature measurements of silicon microbridge emitters

机译:硅微桥发射器的光学温度测量

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Microbridges are miniature suspended structures fabricated in silicon. Passing a current through the microbridge can heat it up to the point of incandescence. A glowing microbridge can be used as a wideband light source. This study presents a method for optical measurement of the temperature of a microbridge. Spectroscopic measurements of microbridges are optically challenging, because the multilayer structures cause interference effects. To determine the temperature from the emitted spectrum, the emissivity was modeled with thin-film Fresnel equations. Temperatures of 500-1100 deg C were obtained from the measured spectra at different levels of applied power. The range is limited by the sensitivity of the detectors at lower power levels and by the stability of the bridge at higher levels. Results of the optical measurements were compared with contact temperature measurements made with a microthermocouple in the same temperature range. The results of the two methods agree within 100 K.
机译:微桥是用硅制成的微型悬挂结构。通过微桥的电流可以将其加热到白炽灯的温度。发光的微桥可以用作宽带光源。这项研究提出了一种光学测量微桥温度的方法。微桥的光谱测量在光学上具有挑战性,因为多层结构会引起干涉效应。为了根据发射光谱确定温度,使用薄膜菲涅耳方程对发射率进行建模。从在不同水平的施加功率下测得的光谱获得500-1100摄氏度的温度。该范围受到较低功率水平下检测器的灵敏度以及较高水平下电桥的稳定性的限制。将光学测量的结果与在相同温度范围内用微热电偶进行的接触温度测量进行了比较。两种方法的结果在100 K之内一致。

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