We systematically study ultraviolet laser-induced ultrafast photovoltaic effect in miscut LaSrAlO_(4) single crystal wafers with different thicknesses at ambient temperature without any applied bias. An open-circuit photovoltage (PV) is obtained when the wafer is irradiated by a 248 nm laser pulse of 20 ns duration. With the decrease of crystal thickness, the peak PV increased to a maximum of 2.66 mV at 340 (mu)m and then decreased to 1.3 mV at 155 (mu)m. Meanwhile, the 10percent-90percent rise time of photovoltaic responses declines gradually. The inner mechanism of the present thickness-dependent photovoltaic response is discussed.
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