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Chemical Vapor Generation of Arsane in the Presence of L-Cysteine. Mechanistic Studies and Their Analytical Feedback

机译:L-半胱氨酸存在下的s烷化学气相生成。机理研究及其分析反馈

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The complex reactivity of the system As-AH-RSH-THB(As velence As(III), As(V); AH velence HCl, HClO_(4), CH_(3)COOH; RSH velence L-cysteine (Cys); THB velence NaBH_(4)) was investigated using continuous flow (CF) hydride generation (HG) coupled either with atomic absorption (AAS) or atomic fluorescence spectrometry (AFS). AsH_(3) generation was examined in the presence of Cys by varying acidity and the type of acid, the mixing sequence, and the reaction time of reagents. The strong depression of arsane generation, which is typically observed in the range of acidity of 0.2-2 M HCl, can be addressed to the low reaction rate of thiolborane, hydroboron complexes, or both toward those As(III) substrates that are formed in the same reaction environment. The simultaneous presence of Cys-borane and As(III)-Cys species is at the origin of the gap of the arsane generation efficiency in the 0.2-2 M HCl acidity range. The selective formation of Cys-borane complexes, which are formed faster than As(III)-thiol complexes, can be achieved by a careful choice of the mixing sequence of the reagents. The simultaneous mixing of sample, Cys, and THB is able to reduce substantially the gap of the arsane generation efficiency in the 0.2-2 M HCl acidity range. These properties were employed to implement a simple method for selective determination of As(III) in samples containing inorganic arsenic: (i) Total inorganic arsenic is determined by sample treatment with 0.2 M Cys for 30 min, acidity 0.1 M HCl, followed by CF-HG-AFS; (ii) As(III) is selectively determined in 0.005 M CH_(3)-COOH in the presence of Cys using a chemifold setup allowing the simultaneous mixing of sample, 0.2 M Cys and 0.1 M THB. The selectivity, measured from the ratio between the slopes of calibration graphs As(III)/As(V), is 220. The interference effects of Cu(II), Fe(III), Ni(II), Co(II), Ag(I), Pd(II), and Pt(IV) can be kept under control using the simultaneous mixing of all the reagents. The tolerance toward the interferences was almost the same as that obtained by allowing the formation of As(III)-Cys complexes (offline sample pretreatment with Cys for 30 min). The method was tested with the application to the natural waters and mineral well waters analysis employing CF-HG-AFS.
机译:As-AH-RSH-THB(As velence As(III),As(V); AH velence HCl,HClO_(4),CH_(3)COOH; RSH velence L-cysteine(Cys);使用连续流(CF)氢化物生成(HG)结合原子吸收(AAS)或原子荧光光谱(AFS)研究了THB velence NaBH_(4)。在Cys存在下,通过改变酸度和酸的种类,混合顺序和试剂的反应时间来检查AsH_(3)的生成。通常在酸度为0.2-2 M HCl的范围内观察到的ane烷生成的强烈降低,可以归因于硫代硼烷,氢硼配合物或两者对形成于其中的As(III)底物的低反应速率相同的反应环境。 Cys-硼烷和As(III)-Cys物种的同时存在是rs酸生成效率在0.2-2 M HCl酸度范围内差距的起点。通过仔细选择试剂的混合顺序,可以选择性地形成比As(III)-硫醇复合物更快形成的Cys-硼烷复合物。在0.2-2 M HCl酸度范围内,样品,Cys和THB的同时混合能够显着减少the烷生成效率的差距。利用这些特性可以实施一种简单的方法来选择性地测定含有无机砷的样品中的As(III):(i)通过用0.2 M Cys 30分钟,酸度0.1 M HCl,然后CF处理样品来测定总无机砷-HG-AFS; (ii)在Cys存在下,使用化学折叠设置在0.005 M CH_(3)-COOH中选择性测定As(III),允许同时混合样品,0.2 M Cys和0.1 M THB。根据校准曲线As(III)/ As(V)的斜率之比测得的选择性为220。Cu(II),Fe(III),Ni(II),Co(II),通过同时混合所有试剂,可以控制Ag(I),Pd(II)和Pt(IV)。对干扰的耐受性几乎与允许形成As(III)-Cys络合物(离线样品用Cys预处理30分钟)所获得的耐受性相同。该方法已通过CF-HG-AFS在天然水和矿井水分析中的应用进行了测试。

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