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Tuning Superconductivity in FeSe Thin Films via Magnesium Doping

机译:通过镁掺杂调整FeSe薄膜中的超导性

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In contrast to its bulk crystal, the FeSe thin film or layer exhibits better superconductivity performance, which recently attracted much interest in its fundamental research as well as in potential applications around the world. In the present work, tuning superconductivity in FeSe thin films was achieved by magnesium-doping technique. T-c is significantly enhanced from 10.7 K in pure FeSe films to 13.4 K in optimized Mg-doped ones, which is approximately 1.5 times higher than that of bulk crystals. This is the first time achieving the enhancement of superconducting transition temperature in FeSe thin films with practical thickness (120 nm) via a simple Mg-doping process. Moreover, these Mg-doped FeSe films are quite stable in atmosphere with H-c2 up to 32.7 T and T-c(zero) up to 12 K, respectively, implying their outstanding potential for practical applications in high magnetic fields. It was found that Mg enters the matrix of FeSe lattice, and does not react with FeSe forming any other secondary phase. Actually, Mg first occupies Fe-vacancies, and then substitutes for some Fe in the FeSe crystal lattices when Fe-vacancies are fully filled. Simultaneously, external Mg-doping introduces sufficient electron doping and induces the variation of electron carrier concentration according to Hall coefficient measurements. This is responsible for the evolution of superconducting performance in FeSe thin films. Our results provide a new strategy to improve the superconductivity of 11 type Fe-based superconductors and will help us to understand the intrinsic mechanism of this unconventional superconducting system.
机译:与块状晶体相比,FeSe薄膜或层表现出更好的超导性能,近来对其基础研究以及世界各地的潜在应用引起了极大的兴趣。在目前的工作中,通过镁掺杂技术实现了对FeSe薄膜的超导调谐。 T-c从纯FeSe薄膜中的10.7 K显着提高到优化的Mg掺杂薄膜中的13.4 K,这大约是块状晶体的1.5倍。这是通过简单的Mg掺杂工艺首次提高具有实用厚度(120 nm)的FeSe薄膜中的超导转变温度。此外,这些掺有Mg的FeSe膜在H-c2高达32.7 T和T-c(零)高达12 K的气氛中非常稳定,这表明它们在高磁场中的实际应用具有出色的潜力。发现Mg进入FeSe晶格的基质,并且不与FeSe反应形成任何其他次级相。实际上,Mg首先占据了Fe的空位,然后在Fe的空位被完全填充后在FeSe晶格中替代了某些Fe。同时,外部Mg掺杂会引入足够的电子掺杂,并根据霍尔系数测量值引起电子载流子浓度的变化。这是导致FeSe薄膜中超导性能发展的原因。我们的结果为提高11型铁基超导体的超导性提供了新的策略,并将有助于我们了解这种非常规超导系统的内在机理。

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