The Role of Stress in the Self-Organized Growth of Porous Anodic Alumina

摘要

Ridges and depressions were formed on the barrier layer during chemical and physical etching of porous anodic alumina (PAA) from the bottom side, indicating nonuniform etching rate around each cell. These behaviors cannot be explained solely by the well-known composition variation, but were in line with the hexagonal distribution of stress within the barrier layer of each cell. Such stress variation should be attributed to the interactions of neighboring cells undergoing volume expansion. These interactions could account for the self-organization of PAA.