Facile Synthesis of Co9Se8 Quantum Dots as Charge Traps for Flexible Organic Resistive Switching Memory Device

摘要

Uniform Co9Se8 quantum dots (CSQDs) were successfully synthesized through a facile solvotherrnal method. The obtained CSQDs with average size of 3.2 +/- 0.1 nm and thickness of 1.8 +/- 0.2 nm were demonstrated good stability and strong fluorescence under UV light after being easily dispersed in both of N,N-dimethylformamide (DMF) and deionized water. We demonstrated the flexible resistive switching memory device based on the hybridization of CSQDs and polyvinylpyrrolidone (PVP) (CSQDs-PVP). The device with the Al/CSQDs-PVP/Pt/poly(ethylene terephthalate) (PET) structure represented excellent switching parameters such as high ON/OFF current ratio, low operating voltages, good stability, and flexibility. The flexible resistive switching memory device based on hybridization of CSQDs and PVP has a great potential to be used in flexible and high-performance memory applications.