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Contribution of the Different Erosion Processes to Material Release from the Vessel Walls of Fusion Devices during Plasma Operation

机译:等离子操作过程中不同侵蚀过程对融合装置容器壁物质释放的贡献

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In high temperature plasma experiments several processes contribute to erosion and loss of material from the vessel walls. This material may enter the plasma edge and the central plasma where it acts as impurities. It will finally be re-deposited at other wall areas. These erosion processes are: · evaporation due to heating of wall areas. At very high power deposition evaporation may become very large, which has been named "blooming". Large evaporation and melting at some areas of the vessel wall surface may occur during heat pulses, as observed in plasma devices during plasma disruptions. · At tips on the vessel walls and/or hot spots on the plasma exposed solid surfaces electrical arcs between the plasma and the vessel wall may ignite. They cause the release of ions, atoms and small metal droplets, or of carbon dust particles. · Finally, atoms from the vessel walls are removed by physical and chemical sputtering caused by the bombardment of the vessel walls with ions as well as energetic neutral hydrogen atoms from the boundary plasma. All these processes have been, and are, observed in today's plasma experiments. Evaporation can in principle be controlled by very effective cooling of the wall tiles, arcing is reduced by very stable plasma operation, and sputtering by ions can be reduced by operating with a cold plasma in front of the vessel walls. However, sputtering by energetic neutrals, which impinge on all areas of the vessel walls, is likely to be the most critical process because ions lost from the plasma recycle as neutrals or have to be refuelled by neutrals leading to the charge exchange processes in the plasma. In order to quantify the wall erosion, "Materials Factors" (MF) have been introduced in the following for the different erosion processes.
机译:在高温等离子体实验中,几种过程会导致腐蚀和容器壁上的物质流失。该材料可能会进入等离子边缘和中心等离子,并在其中充当杂质。最后将其重新存放在其他墙壁区域。这些腐蚀过程是:·由于壁面加热而蒸发。在非常高的功率下,沉积的蒸发可能会变得非常大,这被称为“起霜”。如在等离子体破坏期间在等离子体装置中所观察到的那样,在热脉冲期间可能在容器壁表面的某些区域发生大的蒸发和熔化。 ·在容器壁的尖端和/或暴露在等离子体上的固体表面上的热点,可能会点燃等离子体与容器壁之间的电弧。它们导致离子,原子和小金属滴或碳尘粒的释放。 ·最后,通过离子轰击壁和边界离子产生的高能中性氢原子,对壁进行原子和物理溅射,从而通过物理和化学溅射去除了壁上的原子。在今天的等离子体实验中,已经观察到了所有这些过程。原则上可以通过非常有效地冷却墙砖来控制蒸发,通过非常稳定的等离子体操作可以减少电弧,通过在容器壁前使用冷等离子体进行操作可以减少离子的溅射。但是,撞击到血管壁所有区域的高能中性离子溅射可能是最关键的过程,因为从等离子体中损失的离子会以中性离子形式回收,或者必须由中性离子补充燃料,从而导致等离子体中的电荷交换过程。为了量化壁腐蚀,以下针对不同的腐蚀过程引入了“材料因数”(MF)。

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