The field-dependent interface recombination velocity for organic-inorganic heterojunction

摘要

We have derived an analytical formula which describes the field-dependent interface recombination velocity for the boundary of two materials characterized by different permittivities. The interface recombination of charge carriers has been considered in the presence of image force Schottky barrier. We suggest that this effect may play an important role in the loss of current for organic-inorganic hybrid heterojunctions. It has been proved that the presented method is a generalization of the Scott-Malliaras model of surface recombination at the organic/metal interface. We also discuss that this model is intuitively similar but not analogous to the Langevin mechanism of bulk recombination. (C) 2016 Elsevier B.V. All rights reserved.