...
机译:Si-ZnO异质结薄膜太阳能电池随温度变化的载流子寿命和表面复合速度的建模与分析
Natl Inst Technol Arunachal Pradesh, Elect & Commun Engn, Papum Pare 791112, Arunachal Prade, India;
Tezpur Univ, Elect & Commun Engn, Sonitpur 784028, Assam, India;
Natl Inst Technol Arunachal Pradesh, Elect & Commun Engn, Papum Pare 791112, Arunachal Prade, India;
short-circuit currents; wide band gap semiconductors; elemental semiconductors; silicon; II-VI semiconductors; semiconductor heterojunctions; electron-hole recombination; photoconductivity; carrier lifetime; semiconductor thin films; semiconductor growth; surface recombination; solar cells; zinc compounds; temperature-dependent carrier lifetime; surface recombination velocity; photovoltaic properties; current-voltage measurement; dimensionally optimised device structure; open-circuit voltage; quasisteady-state photoconductance measurement; selected temperature range; rear surface; majority carrier collection; high efficiency solar cell; device temperature; fill factor; external series resistance; short-circuit current; silicon-zinc oxide heterojunction thin film solar cell; high fill factor solar cell; temperature 700; 0 K; voltage 109; 1 mV to 659; 13 mV; temperature 100; 0 K to 600; 0 K; Si-ZnO;
机译:Si-ZnO异质结薄膜太阳能电池温度依赖性载体寿命和表面重组速度的建模与分析
机译:高效硅太阳能电池有效表面复合速度和少数载流子寿命的确定
机译:锗含量对薄膜非晶硅/晶体Si1xGex /晶体硅异质结太阳能电池中有效少数载流子寿命的影响
机译:硅薄膜太阳能电池复合中心的温度相关量子效率分析
机译:通过表征和先进的数值模拟,改善玻璃上的薄膜硅太阳能电池中前表面电荷载流子的收集。
机译:基于对比较实验分析的基于对比实验分析的无机空穴传输层与钙钛矿薄膜形态和光学性质的对比实验分析
机译:锗含量对薄膜非晶硅/晶体Si1xGex /晶体硅异质结太阳能电池中有效少数载流子寿命的影响
机译:高效si太阳能电池的寿命和有效表面复合速度测量