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首页> 外文期刊>Chemical Physics Letters >Raman and conductivity studies of boron doped microcrystalline diamond, facetted nanocrystalline diamond and cauliflower diamond films
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Raman and conductivity studies of boron doped microcrystalline diamond, facetted nanocrystalline diamond and cauliflower diamond films

机译:掺硼微晶金刚石,多面纳米晶金刚石和花椰菜金刚石薄膜的拉曼和电导率研究

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摘要

We present data showing how the electrical conductivity and Raman spectra of boron-doped CVD diamond films vary with both B content and crystallite size, for microcrystalline diamond (MCD), facetted nanocrystalline diamond (f-NCD) and 'cauliflower' diamond (c-NCD). The position of the Lorentzian contribution to the 500 cm(-1) Raman feature was used to estimate the B content. This underestimated the SIMS concentration of B by a factor of similar to 5 for the f-NCD and c-NCD films, but remained reasonably accurate for MCD films. One explanation for this is that most of the B incorporates at the grain boundaries and not in substitutional sites. (C) 2007 Elsevier B.V. All rights reserved.
机译:我们提供的数据表明,对于微晶金刚石(MCD),多面纳米晶金刚石(f-NCD)和“花椰菜”金刚石(c-),硼掺杂CVD金刚石膜的电导率和拉曼光谱如何随B含量和微晶尺寸而变化。 NCD)。洛伦兹对500 cm(-1)拉曼特征的贡献的位置用于估算B含量。对于f-NCD和c-NCD膜,这低估了SIMS的B浓度,约为5,但对于MCD膜仍保持合理的准确性。对此的一种解释是,大多数B掺入晶界而不是替代位点。 (C)2007 Elsevier B.V.保留所有权利。

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