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The grain-boundary-related optical and electrical properties in polycrystalline p-type ZnO films

机译:多晶p型ZnO薄膜中与晶界有关的光学和电学性质

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摘要

Cathodoluminescence spectra and electrical properties of the N doped and N-Al codoped p-type ZnO films and the dependence of these two properties on the post-annealing were investigated. Spectral analyses show that the intensity of the green emission strongly depends on the annealing ambient and closely relates with the width of the electron depletion region at the particle boundary. The conducting type and electrical properties of N doped and N-Al codoped ZnO films are greatly affected by the annealing process. The grain boundary effect was proposed to explain the green emission behavior and the p-type conduction in polycrystalline ZnO based films. (c) 2006 Elsevier B.V. All rights reserved.
机译:研究了N掺杂和N-Al共掺杂的p型ZnO薄膜的阴极荧光光谱和电学性质以及这两种性质对后退火的依赖性。光谱分析表明,绿色发射的强度在很大程度上取决于退火环境,并且与粒子边界处的电子耗尽区的宽度密切相关。 N掺杂和N-Al共掺杂的ZnO薄膜的导电类型和电性能受退火工艺的影响很大。提出了晶界效应来解释多晶ZnO基薄膜中的绿色发射行为和p型导电。 (c)2006 Elsevier B.V.保留所有权利。

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