Field emission displays of wide-bandgap gallium nitride nanorod arrays grown by hydride vapor phase epitaxy

摘要

We demonstrate the very simple realization of the field emission displays using wide-bandgap gallium nitride nanorod grown by hydride vapor phase epitaxy. For the real device fabrication and mass production, we fabricated high-density nanorod arrays. The electron emission turn-on field (E-10) was about 0.5 V/mum and total current was 4.45 mA at 2.06 V/mum (current density, J = 54 muA/cm(2)). A uniform 'Q' character emission image with high stability was obtained from GaN nanorod array electron emitters. The electron emission properties of GaN nanorod arrays were comparable with (or even lower turn-on voltage than) those of carbon nanotubes. (C) 2003 Elsevier B.V. All rights reserved. [References: 17]