Intramolecularly Coordinated Gallium Sulfides: Suitable Single Source Precursors for GaS Thin Films

摘要

Our studies have been focused on the synthesis of N -> Ga coordinated organogallium sulfides [(LGa)-Ga-1(mu-S)](3) (1) and [(LGa)-Ga-2(mu-S)](2) (2) containing either N,C,N- or C,N-chelating ligands L-1 or L-2 (L-1 is {2,6-(Me2NCH2)(2)C6H3}(-) and L-2 is {2-(Et2NCH2)-4,6-tBu(2)-C6H2}(-)). As the result of the different ligands, compounds 1 and 2 differ mutually in their structure. To change the Ga/S ratio, unusually N -> Ga coordinated or-ganogallium tetrasulfide (LGa)-Ga-1(kappa(2)-S-4) (3) was prepared and the unprecedented complex [{2-[CH{(CH2)(3)CH3}(mu-OH)]-6-CH2NMe2} C6H3] GaS (4) was also isolated as the minor by product of the reaction. Compounds 1-3 were further studied as potential single-source precursors for amorphous GaS thin film deposition by spin-coating.