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Effects of sintering parameters and Nd doping on the microwave dielectric properties of Y2O3 ceramics

机译:烧结参数和Nd掺杂对Y2O3陶瓷微波介电性能的影响

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Y2O3 ceramics with good dielectric properties were prepared via co-precipitation reaction and subsequent sintering in a muffle furnace. The effects of Nd doping and sintering temperature on microwave dielectric properties were studied. With the increase in sintering temperature, the density, quality factor (Q x f), and dielectric constant (epsilon(r)) values of pure Y2O3 ceramics increased to the maximum and then gradually decreased. The Y2O3 ceramics sintered at 1500 degrees C for 4 h showed optimal dielectric properties: epsilon(r) = 10.76, Q x f = 82, 188 GHz, and tau(f) = 54.4 ppm/degrees C. With the addition of Nd dopant, the Q x f values, epsilon(r) and tau(f) of the Nd: Y2O3 ceramics apparently increased, but excessive amount degraded the quality factor. The Y2O3 ceramics with 2 at% Nd2O3 sintered at 1460 degrees C displayed good microwave dielectric properties: epsilon(r) = 10.4, Q x f = 94, 149 GHz and tau(f) = -46.2 ppm/degrees C. (C) 2016 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
机译:通过共沉淀反应和随后在马弗炉中烧结制备具有良好介电性能的Y2O3陶瓷。研究了钕掺杂和烧结温度对微波介电性能的影响。随着烧结温度的升高,纯Y2O3陶瓷的密度,品质因数(Q x f)和介电常数(epsilon(r))值增加到最大值,然后逐渐减小。在1500摄氏度下烧结4 h的Y2O3陶瓷表现出最佳的介电性能:epsilon(r)= 10.76,Q xf = 82,188 GHz,tau(f)= 54.4 ppm /℃。 Nd:Y2O3陶瓷的Q xf值epsilon(r)和tau(f)明显增加,但是过量会降低品质因数。 Nd2O3含量为2 at%的Y2O3陶瓷在1460摄氏度下烧结显示出良好的微波介电性能:epsilon(r)= 10.4,Q xf = 94,149 GHz和tau(f)= -46.2 ppm /摄氏度。(C)2016爱思唯尔有限公司和Techna Group Srl版权所有。

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