GaInAsP/InP strain-compensated multiple-quantum-wire lasers fabricated by dry etching and regrowth

摘要

GaInAsP/InP strain-compensated multiple-quantum-wire lasers with the wire widths of 18 nm and 27 nm in the period of 80 nm were fabricated by electron beam lithography, CH{sub}4/H{sub}2-reactive ion etching and organometallic vapor-phase-epitaxial regrowth. Size distributions of these quantum-wire structures were measured by scanning electron microscope and the standard deviation was obtained to be less than ±2 nm, and spontaneous emission spectral widths of these quantum-wire lasers were almost the same as that of the quantum-film laser fabricated from the same initial wafer, hence, good size uniformity of these quantum-wire structures was indicated. In addition, the differential quantum efficiency of these quantum-wire lasers was comparable to that of quantum-film lasers at room temperature, and there was no excess loss caused by the etching/regrowth process. These results indicate that this process is very promising for fabrication of ultra fine structures with good size uniformity.