...
首页> 外文期刊>電子情報通信学会技術研究報告. レ-ザ·量子エレクトロニクス. Lasers and Quantum Electronics >Broadband and ultrafast cross-phase modulation in InGaAs/AlAsSb coupled quantum well waveguides: mechanism and optimization
【24h】

Broadband and ultrafast cross-phase modulation in InGaAs/AlAsSb coupled quantum well waveguides: mechanism and optimization

机译:InGaAs / AlAsSb耦合量子阱波导中的宽带和超快速交叉相位调制:机理和优化

获取原文
获取原文并翻译 | 示例
           

摘要

We adopted the spectral method to evaluate the picosecond cross-phase modulation (XPM) of InGaAs/AlAsSb coupled double quantum wells in the whole telecommunication wavelength region, which indicated an about 300 nm broadband feature. The XPM wavelength dependence reveals the interband dispersion model under intersubband excitation. Based on this model, the quantum well structure was optimized by eight-band hp method for enhancing the XPM power efficiency.
机译:我们采用光谱方法来评估整个电信波长范围内InGaAs / AlAsSb耦合双量子阱的皮秒交叉相位调制(XPM),这表明宽带特征约为300 nm。 XPM波长依赖性揭示了子带间激励下的带间色散模型。在此模型的基础上,通过八波段hp方法对量子阱结构进行了优化,以提高XPM的功率效率。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号