...
【24h】

A Fast Lithographic Mask Correction Algorithm

机译:快速光刻掩模校正算法

获取原文
获取原文并翻译 | 示例

摘要

As technology nodes downscaling into sub-16 nm regime, the industry relies heavily on Optical Proximity Correction (OPC) to improve mask pattern transfer fidelity and process window for optical micro-lithography. However, OPC computational time becomes a crucial factor since mask data have to be prepared in manner of hours to cover the huge industrial needs. Nevertheless, there is a trade-off between mask image accuracy and OPC simulation time. In this paper, we propose a new grid based algorithm to improve the accuracy of simulated mask image with the least number of convolutions during OPC process, which is proportional to OPC computational time. We analyze our algorithm and the observations we obtained on public benchmark released by IBM for ICCAD 2013 CAD contest.
机译:随着技术节点的规模缩小到16 nm以下,该行业严重依赖光学邻近校正(OPC)来提高掩模图案转移的保真度和光学微光刻的工艺窗口。但是,OPC的计算时间成为至关重要的因素,因为必须以小时的方式准备掩模数据来满足巨大的工业需求。尽管如此,在掩膜图像精度和OPC仿真时间之间还是需要权衡取舍。在本文中,我们提出了一种新的基于网格的算法,以在OPC处理过程中以最少的卷积数提高模拟掩模图像的精度,该精度与OPC计算时间成正比。我们分析了我们的算法以及在IBM针对ICCAD 2013 CAD竞赛发布的公共基准上获得的观察结果。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号