Characteristic of SiGe dynamic threshold voltage MOSFET (DTMOS)

摘要

Dynamic Threshold voltage MOSFET (DTMOS) is one of the most promising devices for low power and high speed applications. In order to realize a high-performance DTMOS, we have fabricated SiGe pDTMOS using strained SiGe. A high hole mobility in the SiGe channel and a large body effect factor bring excellent electrical properties, such as a high saturation drain current and a good suppression of short-channel effects.