METHOD OF MAKING A LOW LEAKAGE DYNAMIC THRESHOLD VOLTAGE MOS (DTMOS) TRANSISTOR

摘要

A method of fabricating a dynamic threshold voltage metal oxide semiconductor (DTMOS) for operation at threshold voltages less than 0.6 volts includes preparing a silicon substrate to form a trench in an active area; forming a silicon layer in the trench; doping the silicon layer in the trench to form a highly doped layer, having a doping ion concentration in a range of between about 5.0·10¹⁷ cm^−3 and 5.0·10¹⁸ cm^−3; depositing a silicon layer over the high doped silicon layer; and completing the structure to form a DTMOS transistor.