Study of recrystallized poly-Si film prepared by ELA of a-Si from a viewpoint of hydrogens in the film

摘要

In this study we investigate the characteristic of the poly-Si film prepared by the excimer laser annealing (ELA) method of a-Si deposited using plasma enhanced chemical vapor deposition (PE-CVD) method on SiO{sub}2/SiN/glass substrate (SiN substrate). The crystallinity of the poly-Si film on the SiN substrate is better than that using low pressure chemical vapor deposition (LPCVD) method on the quartz glass substrate (quartz substrate). The grain size of the poly-Si on the SiN substrate is smaller than that on the quartz substrate. These phenomena are due to the difference of the crystal growth mechanism. The stress in the poly-Si film on the SiN substrate is smaller than that on the quartz substrate. For the crystal growth mechanism on the SiN substrate, it is considered that hydrogens in the poly-Si play an important role.