Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy

摘要

Soft x-ray-excited angle-resolved photoemission results for nitride films formed using nitrogen-hydrogen radicals on Si(100), Si(111), and Si(110) are reported. The Si_3N_4/Si interfaces on all three surfaces are compositionally abrupt. This conclusion is based on 1) the observation that no Si atoms bonded with three N atoms and one Si atom were detected, 2) the observation that the number of Si-H bonds at the Si_3N_4/Si(110) interface is 38~53% larger than those at the Si_3N_4/Si(100) and Si_3N_4/Si(111) interfaces indicates a dependence of the interface structure on the orientation of the substrate.