Synchrotron radiation X-ray reflectivity measurements of CVD-silicon oxide film treated by radical oxidation

摘要

The insulation characteristic of CVD silicon oxide films are inferior to that of thermal silicon oxide films. However, CVD silicon oxide films are able to grow at low temperature and on any under layers. On the other hand, radical oxidation is able to be treated at low temperature because the oxidizability of that is very strong. We studied the application of radical oxidation to CVD silicon oxide films to improve the insulation characteristic at low temperature. On the other hand, conventional X-ray reflectivity measurements could not obtain the density of ultra thin silicon oxide films because the intensity of X-ray flax is insufficient. We applied the synchrotron radiation X-ray reflectivity measurements to the CVD silicon oxide films treated by radical oxidation, and estimate the density and the surface roughness. It was clarified that density of CVD silicon oxide films increased as high as thermal oxide films and leak current decreased greatly by radical oxidation. The surface roughness did not decrease. Therefore increasing of density would decrease the leak current.