High resolution angle-resolved photoelectron spectroscopy of Si oxynitride and high-k films/Si interfaces

摘要

High-resolution photoelectron spectroscopy using very bright undulator synchrotron radiation has been performed for ultrathin gate insulators such as Si oxynitride, ZrO{sub}2 and HfO[sub]2 films. The chemistry of nitrogen atoms in Si oxynitride films is clearly elucidated and band offsets are precisely determined by the substrate information subtraction method. The dependence of valence band and conduction band offsets on nitrogen concentration in Si oxynitride films is clarified, and the band offsets of ZrO{sub}2 and HfO{sub}2 films with double layer structures are determined.