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Theoretical Study on Spin Polarization of III-V Compound Tips

机译:III-V族化合物尖端自旋极化的理论研究

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We investigate spin electronic structure of GaNprobes, using first principles molecular orbital calculations. It isfound that at the pyramidal heads of the probes with the axesparallel to the crystallographic axes [100] and [111] in thezincblende GaN, electron spins are polarized at the lowest energystates. Nearly 8%~16% of electrons in the valence band are spin-polarized at the proximity of the head depending upon the sort ofthe atom on the apex and the crystallographic axis of the probe. Itis observed that spin polarizability depends on the difference ofelectronegativities of the elements in a compound and on a highlysymmetric nanostructure of the probe. It is due to Jahn-Tellereffect of the tip configuration.
机译:我们使用第一原理分子轨道计算研究GaN探针的自旋电子结构。已经发现,在探针的锥头处,其轴平行于锌灿烂的GaN中的结晶轴[100]和[111],电子自旋以最低的能量态极化。在价带中,约有8%〜16%的电子在根部附近发生自旋极化,这取决于顶点上原子的种类和探针的结晶轴。据观察,自旋极化率取决于化合物中元素的电负性的差异以及探针的高度对称的纳米结构。这是由于尖端配置的Jahn-Tellereffect所致。

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