Ga~+ 一次イオンTOF－SIMSによるSi酸化膜厚評価の可能性

摘要

In Ga~+ primary ion TOF-SIMS, the fragment patterns from thin oxidized metal surfaces appear obeying the already proposed rule. The fragment ions M_xO_y (M: metal) appear in qx >= 2 y + 1 for positive ions and qx <= 2 y + 1 for negative ions (q: valence of M). This paper shows the possibility of the thickness estimation of thin oxide films (SiO_2) on Si, from the relative intensity of typical fragment ions from thin oxides or the substrate as identified by the proposed rule in Ga~+ primary ion TOF-SIMS spectrum.