Self-heating free parameter extraction and circuit simulation for SOI CMOS

摘要

Novel SOI (Silicon On Insulator) model parameter extraction methodology based on the concept of SHE (Self-Heating Effect) free device modeling, is proposed and demonstrated for a 0.18 μm PD (Partially Depleted) SOI technology. In this technology, prior to SPICE parameter extraction, the device thermal resistances are measured and the current loss due to SHE is added back analytically to dc W data. Therefore, the parameters are free from SHE. Dc, ac, and transient simulation results using this technology show good agreement with measurement data.