Memory cell for Embeded DRAM on SOI - FBC (Floating Body Cell)

摘要

The memory cell characteristics of the FBC (Floating Body Cell) have been experimentally verified by 0.175μm cell array for the first time. The FBC is a one-transistor gain cell, which is a suitable structure for the future embedded DRAM on SOI wafer, 99.77% function bit yield of 96Kbit ADM (Array Diagnostic Monitor) has been obtained, and the retention time of 500msec have been realized at 85℃.