Study of low-temperature intermediate layers to grow high-quality thick InN films by RF-MBE

摘要

We have studied the growth of high-quality thick InN films using low-temperature-grown intermediate layers by radio frequency plasma-excited molecular beam epitaxy (RF-MBE). From scanning electron microscopy (SEM) observation, it was confirmed that surface morphology of thick InN film was improved by using low-temperature intermediate layers. It was also confirmed that electrical properties were improved dramatically. These were caused by obtained a uniform surface with low-temperature intermediate layers.