Epitaxially growing thick tear-free group III nitride semiconductor layers used in the production of modern opto-electronic and electronic components comprises using an aluminum-containing group III nitride intermediate layer

摘要

Epitaxially growing thick tear-free group III nitride semiconductor layers comprises depositing an aluminum-containing group III nitride intermediate layer which is grown at the same or higher temperature than the buffer material and has a thickness which leads to the aluminum-containing layer partially or completely relaxing.