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Chemical mechanical polisher technology for 300mm/0.18-0.13μm semiconductor devices

机译:用于300mm /0.18-0.13μm半导体器件的化学机械抛光技术

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摘要

Chemical Mechanical Polisher (CMP) is now a fully accepted method of planarizing inter-dielectric layers of 200 mm/0.25 μm semiconductor devices. Ebara has made a technological breakthrough in this field by developing a CMP system for planarizing 300 mm/0.18-0.13μm devices. This system, featuring the dry-in/dry-out concept developed for 200 mm/0.25 μm semiconductor devices, is currently being demonstrated to prospective clients. Development is underway for optimizing CMP process conditions suchas those involving STI, plugs, and metal wires, as well as for slurry supply and waste fluid treatment.
机译:化学机械抛光器(CMP)现在已成为使200 mm / 0.25μm半导体器件的介电层间平坦化的一种公认方法。 Ebara通过开发用于平面化300 mm /0.18-0.13μm器件的CMP系统,在该领域取得了技术突破。该系统具有针对200 mm / 0.25μm半导体器件开发的干入/干出概念,目前正在向潜在客户展示。正在开发以优化CMP工艺条件,例如涉及STI,塞子和金属线的条件,以及用于浆料供应和废液处理的条件。

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