Progress and Status of Silicon Nanocrystal Based MOS Light Emitting Diodes

摘要

We demonstrate the dehydrogenation/ablation and optical refinement properties of a localized CO{sub}2-laser rapid-thermal-annealed or ablated Si-rich SiO{sub}x film with buried Si nanocrystals. The synthesis of Si nanopyramids at SiO{sub}x/Si interface for enhancing electroluminescence of Si-rich SiO{sub}x is reported, which assists enhancing Fowler-Nordheim tunneling effect and internal/external quantum efficiencies in such adevice with interfacial Si nano-pyramids or nano-pillar array is premier. We demonstrate a rapid self-assembly of Ni nanodots on Si substrate covered by a less-adhesive and heat-accumulated SiO{sub}2 layers to be an etching mask for the formation of Si nano-pillars on Si substrate. Anomalous micro-photoluminescence and low refractive index of the high-aspect-ratio Si nano-pillars are determined. Up to now, the carrier injection is still a problem to further improve the light emission, however, we characterize the memory effect of Si nanocrystals by capacitance-voltage analysis to realize its charging effect and carrier escaping rate.