A study of a temperature compensation gate bias circuit for Ku-band power MMIC amplifiers by using a large-signal FET model

摘要

A design method of a temperature compensation gate bias circuit for Ku-band power monolithic-microwave integrated-circuit (MMIC) power amplifiers by using a large signal FET model is presented. The large signal FET model is based on Angelov model, which accounts for temperature characteristics of an FET. A temperature compensation gate bias circuit, which is composed of a few diodes and a resistor, is designed and fabricated for a Ku-band power MMIC amplifier. The Gain variation of the fabricated amplifier has been improved from 3.0dB to 0.6dB in temperature range from -20℃ to +100℃. It is confirmed that a temperature compensation gate bias circuit can be designed by using the large signal FET model.