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Electronic and magnetic properties of MnF3(4) superhalogen cluster-sandwiched bilayer graphene: First-principles calculations

机译:MnF3(4)超级卤素团簇夹层双层石墨烯的电子和磁性:第一性原理计算

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By conducting first-principles calculations with van der Waals correction, we investigate the structural, electronic, and magnetic properties of GriNInF(3(4))/Gr sandwiched structures. The calculated binding energies were within 54-79 meV per carbon atom for the four GriMnF(3(4))/Gr sandwiched structures tested in our study. This result implies that the MnF3(4) clusters stabilize the AA and AB stacking in the Gr/MnF3(4)/Gr sandwich structures because of the high electronegativity of the clusters. Charge transfer from bilayer graphene to the MnF3(4) clusters is noted to induce effective hole doping in graphene. Spin polarization in the graphene layer is approximately 100% along the majority direction on the position of the Fermi level in the MnF3-doped structures. The band gaps of the spin-up and spin-down branches and the magnetic moments of the C atoms are increased by compression interlayer spacing. The MnF3 clusters affect the electronic and magnetic properties of graphene in the vicinity of the Fermi level; thus, the clusters are highly suitable for use as a dopant in spintronic applications. (C) 2016 Elsevier B.V. All rights reserved.
机译:通过进行范德华校正的第一性原理计算,我们研究了GriNInF(3(4))/ Gr夹心结构的结构,电子和磁性。对于我们研究中测试的四个GriMnF(3(4))/ Gr夹心结构,计算出的结合能在每个碳原子54-79 meV之内。该结果表明,由于MnF3(4)簇的高电负性,它们稳定了AA和AB在Gr / MnF3(4)/ Gr夹心结构中的堆积。从双层石墨烯到MnF3(4)簇的电荷转移被注意到在石墨烯中引起有效的空穴掺杂。石墨烯层中的自旋极化沿MnF3掺杂结构中费米能级位置的多数方向约为100%。自旋向上和自旋向下分支的带隙以及C原子的磁矩通过压缩层间间距而增加。 MnF3团簇在费米能级附近影响石墨烯的电子和磁性。因此,该簇非常适合在自旋电子学应用中用作掺杂剂。 (C)2016 Elsevier B.V.保留所有权利。

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