III-V/Ge CMOS technologies and heterogeneous integrations on Si platform

摘要

CMOS utilizing high mobility III-V/Ge channels on Si substrates is expected to be one of key devices for high performance and low power advanced LSIs in the future. In addition, the heterogeneous integration of these materials on the Si platform can provide a variety of applications from high speed logic CMOS to versatile SoC chips, where various functional devices can be co-integrated. In this presentation, we review the current status of III-V/Ge CMOS, the critical issues and possible solutions to break through the difficulties.