Application of confocal laser scanning microscope with a Raman spectroscopy interface for material characterization by depth-sensing indentation

摘要

Depth-sensing indentation (DSI) is a simple effective method for evaluating the mechanical properties of industrial materials. Especially, it is important to understand the microstructures and defects in silicon caused by microano-machining. The response of crystalline silicon to indentation has been a topic of interest for many years. A number of authors have reported discontinuities in both the loading and unloading processes of load-displacement curves of silicon. On the other hand, the piling-up or sinking-in behavior that appears around the indent of material plays an important role in the accurate determination of material properties using DSI. This work examines residual stress in the pile up region and in its vicinity following indent in single crystal silicon wafers. A possible candidate to characterize residual stress is micro-Raman spectroscopy. It is well known that Raman spectroscopy can be used to characterize stresses with micron spatial resolution. In this study, we demonstrate mechanical stress and shape profile measurements using CSLM interface for Raman spectroscopy.