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首页> 外文期刊>Comptes Rendus Chimie >Electrochemical pore formation onto semiconductor surfaces
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Electrochemical pore formation onto semiconductor surfaces

机译:在半导体表面上形成电化学孔

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摘要

In this paper, a review on electrochemical porous etching of semiconductors is proposed. After a brief history, chemical and electrochemical etching of semiconductors are considered and the pore formation models are discussed. The influences of the key parameters on porous etching are illustrated by listing the numerous pore morphologies reported in the literature. A short inventory of typical applications in various fields is given in the conclusion.
机译:在本文中,提出了对半导体的电化学多孔蚀刻的综述。经过简短的历史,考虑了半导体的化学和电化学蚀刻,并讨论了孔形成模型。通过列出文献中报道的众多孔隙形态,可以说明关键参数对多孔蚀刻的影响。结论中简要列出了各个领域的典型应用。

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