Thermally assisted (TA) switching has been proposed to reduce the switching field while keeping the sufficient thermal stability, and is considered to be one of the candidates of the magnetization switching scheme in high density magnetic random access memories (MRAMs). In order to achieve the high density TA-MRAM, Rare earth (RE) - transition metal (TM) alloys have been attracting attention because they have a high perpendicular anisotropy, large thermal stability and adjustable Curie temperature. Previously, we reported the TA switching on the MTJ element with TbFe memory layer and Al-O barrier. In this study, we report TA switching on MgO-based MTJ with TbFe memory layer, since the MgO barrier exhibits lower RA product than Al-O, which is critical for the sufficient temperature elevation in MTJ when the limited bias voltage.
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