NUMERICAL SIMULATION OF THE PHOTO CURRENT IN THE THIN METAL - SILICON STRUCTURES WITH QUANTUM WELLS

摘要

Using the SimWindows program package, we have numerically calculated the photocurrents in the space-charge region of thin metal-silicon structures with quantum wells (QWs) as well as their dependences on the geometrical size and the number of the QWs, and on the doping level. A possibility of creating the photosensitive structures on the basis of the layers of porous silicon with various degree of porosity has been analyzed.