リソグラフィ用ArFエキシマレーザーの現状と将来

摘要

ArF-immersion technology is even spot lighted as the enabling technology for below 45 nm node until EUV lithography coming into lithography market. The 193-nm lithography has expanded from 65 nm node to 45 nm node of mass production phase. And below 45 nm node, double patterning technology is now under development. The ArF excimer laser source is required higher average laser power. The GT-series ArF laser light source of the ultra line narrowed spectrum is developed in 2006. Improving on the GT40A/60A, which achieved a spectral bandwidth (E95) of 0.5 pm, the GT61A reaches a spectral bandwidth of 0.35 pm in 2008. In addition, a newly developed high-precision measuring instrument and stabilization mechanism are provided as a standard feature, allowing highly stable spectrum performance throughout the entire lifetime. Now corresponding to double pattering requirement, GT62A (60 W/90 W, 6000 Hz, 10 mJ/15 mJ, 0.35 pm/ E95) is successfully developed based on the production proven GT (GigaTwin) platform, which has advanced Injection Lock system. The GT62A represents a great contribution to the stability of the lithography process not only for immersion lithography, but also for double pattering lithography.