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光リソグラフィー技術の限界と極端紫外リソグラフィー技術への期待―その開発の経緯と今後の展開―

机译:光学光刻技术的局限性和对极端紫外光刻技术的期望-其发展历史和未来发展-

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摘要

The development of ultralarge scale integration (ULSI) has been promoted by the miniaturization of ULSI devices. This miniaturization has been supported by the development of lithography. We have been using optical lithography for the fabrication of ULSI devices. However optical lithography is now facing its resolution limit. To overcome this limitation, various tricks for resolution enhancement are widely adopted. However, we have to restrict the pattern layout flexibility strictly. By the introduction of extreme ultraviolet (EUV) lithography, the patter layout will be set free from these restrictions and get higher resolution. Still there are many issues in EUV lithography. In this paper, firstly the history of lithography is reviewed and the issues of current optical lithography are discussed. The issues of EUV lithography are summarized in the next. The history of EUV development is also shown. Then the remaining issues and future prospects are introduced.
机译:超大规模集成电路(ULSI)的发展已经通过ULSI器件的小型化得到了推动。光刻技术的发展为这种小型化提供了支持。我们一直在使用光学光刻技术制造ULSI器件。然而,光学光刻现在正面临其分辨率极限。为了克服该限制,广泛采用了用于提高分辨率的各种技巧。但是,我们必须严格限制图案布局的灵活性。通过引入极紫外(EUV)光刻技术,图案布局将不受这些限制,并获得更高的分辨率。 EUV光刻中仍然存在许多问题。在本文中,首先回顾了光刻的历史,并讨论了当前光学光刻的问题。 EUV光刻的问题将在下面概述。还显示了EUV的发展历史。然后介绍了剩余的问题和未来的前景。

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