Estimation of Ultra-Shallow Implant for Semiconductor Devices

摘要

New developments in semiconductor device processes require new estimation methods for semiconductor devices. Toshiba has developed estimation methods for ultra-shallow junction implants in next-generation devices. These methods consist of secondary ion mass spectrometry that enables accurate junction depth estimation for ultra-shallow junctions, and nuclear reaction analysis and chemical analysis that enable accurate measurement of implant doses (boron and arsenic doses). Using these three analytical methods, we are promoting the development of next-generation semiconductor devices.