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Fabrication of nanoline arrays of noble metals by electroless plating and selective etching process

机译:通过化学镀和选择性刻蚀工艺制备贵金属纳米线阵列

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摘要

The fabrication of one-dimensional metallic nanostructures has attracted much attention because they can be utilized to components of nanoelectronic devices. In this paper, we report the fabrication of nanoline array composed of Cu, Au, Cu/Ag by the electroless plating and etching technique. In all case, the metallic layers uniformly coated the template surface with sub-100 nm thickness. Bilayer structure of Cu and Ag layer was also formed by the sequential plating of Ag and Cu. Top layer and the template were selectively removed by dry etching process with Ar, H-2 and O-2. Nanoline array of Cu, Au, and Ag/Cu were finally formed on a Si wafer. The width of the metallic line is close to the thickness of the original coating layer. Our process provides the rapid and cost-efficient nanofabrication of metal nanoline.
机译:一维金属纳米结构的制造已经引起了很多关注,因为它们可以用于纳米电子器件的组件。在本文中,我们报道了通过化学镀和蚀刻技术制备的由Cu,Au,Cu / Ag组成的纳米线阵列。在所有情况下,金属层均以小于100 nm的厚度均匀地覆盖模板表面。 Cu和Ag层的双层结构也通过依次电镀Ag和Cu而形成。通过使用Ar,H-2和O-2的干法刻蚀工艺选择性去除顶层和模板。最终在Si晶片上形成Cu,Au和Ag / Cu的纳米线阵列。金属线的宽度接近原始涂层的厚度。我们的工艺提供了快速,经济高效的金属纳米线纳米加工。

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