首页> 外文期刊>Journal of Ceramic Processing Research. (Text in English) >Processing and characterization of sol-gel deposited (100)-oriented CSBTi thick films on Pt (111)/Ti/SiO2/Si (100) substrate
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Processing and characterization of sol-gel deposited (100)-oriented CSBTi thick films on Pt (111)/Ti/SiO2/Si (100) substrate

机译:Pt(111)/ Ti / SiO2 / Si(100)衬底上溶胶-凝胶沉积(100)取向的CSBTi厚膜的处理和表征

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摘要

Predominantly (100)-oriented Ca0.4Sr0.6Bi4Ti4O15 (CSBTi) thick films were deposited on Pt (111)/Ti/SiO2/Si substrates using a novel powder-gel method combined with annealed procedure. In this method, surface-modified fine CSBTi crystalline particles are well dispersed in a sol-gel precursor solution to have an uniform slurry which is then spin-coated onto a substrate. The thick films were then annealed at 750 degrees C for the annealing times ranging from 0 h to 4 h. The film annealed for 2 h exhibits a well saturated hysteresis loop with a remanent polarization (P-r) of 28.7 mu C/cm(2), much larger than the reported values Furthermore, no discernible fatigue effect can be observed after 10(10) switching cycles.
机译:使用新型粉末-凝胶法与退火工艺相结合,在Pt(111)/ Ti / SiO2 / Si衬底上主要沉积(100)取向的Ca0.4Sr0.6Bi4Ti4O15(CSBTi)厚膜。在这种方法中,将表面改性的CSBTi细晶体颗粒很好地分散在溶胶-凝胶前体溶液中,得到均匀的浆液,然后将其旋涂到基材上。然后将厚膜在750摄氏度下退火0到4小时。退火2 h的薄膜表现出很好的饱和磁滞回线,剩余极化(Pr)为28.7μC / cm(2),远大于报告值,此外,在10(10)转换后没有观察到明显的疲劳效应周期。

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