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UV-Vis and Photoluminescent Spectra of TiO_2 Films

机译:TiO_2薄膜的紫外-可见光谱和光致发光光谱

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摘要

TiO_2 films have been deposited on glass substrates using DC reactive magnetron sputtering at different oxygen partial pressures from 0.10Pa to 0.65 Pa. The transmittance (UV-vis) and photoluminescence (PL) spectra of the films were recorded. The results of the UV-vis spectra show that the deposition rate of the films decreased at oxygen partial pressure P (O_2) >= 0.15 Pa, the band gap increased from 3.48eV to 3.68eV for direct transition and from 3.27eV to 3.34eV for indirect transition with increasing the oxygen partial pressure. The PL spectra show convincingly that the transition for films was indirect, and there were some oxygen defect energy levels at the band gap of the films. With increasing the O_2 partial pressure, the defect energy levels decreased. For the films sputtered at 0.35 and 0.65 Pa there were two defect energy levels at 2.63eV and 2.41eV, corresponding to 0.72eV and 0.94eV below the conduction band for a band gap of 3.35eV, respectively. For the films sputtered at 0.10Pa and 0.15 Pa, there was an energy band formed between 3.12eV and 2.06eV, corresponding to 0.23eV and 1.29eV below the conduction band.
机译:在0.10Pa至0.65Pa的不同氧分压下,通过DC反应磁控溅射在玻璃基板上沉积了TiO_2薄膜。记录了薄膜的透射率(UV-vis)和光致发光(PL)光谱。紫外可见光谱结果表明,在氧分压P(O_2)> = 0.15 Pa时,薄膜的沉积速率降低,直接跃迁的带隙从3.48eV增加到3.68eV,从3.27eV增加到3.34eV随着氧气分压的增加而间接转变。 PL光谱令人信服地表明,膜的转变是间接的,并且在膜的带隙处存在一些氧缺陷能级。随着O_2分压的增加,缺陷能级降低。对于以0.35和0.65 Pa溅射的薄膜,在2.63eV和2.41eV处有两个缺陷能级,分别对应于导带以下3.35eV的带隙0.72eV和0.94eV。对于以0.10Pa和0.15Pa溅射的薄膜,在3.12eV和2.06eV之间形成了一个能带,对应于导带以下的0.23eV和1.29eV。

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