METHOD FOR FORMING HIGH PERMITTIVITY FILM INCLUDING TiO_2 THIN FILM

摘要

Disclosed is a thin film forming method capable of getting a dielectric thin film which can have high permittivity, alleviate a problem of current leakage caused by a thin film, and have reliability. In forming a TiO_2 thin film as a high permittivity capacitor dielectric film of a DRAM device or as a buffer film of a thin film solar cell by atomic later deposition, a substrate temperature is controlled to 270 to 310C to reduce an impurity content when using gas such as 5-Cyclopentandienylethyl-N-methylamido bis(dimethylamino) titianium and the like.;COPYRIGHT KIPO 2019