METHOD OF FORMING THIN FILM HAVING HIGH PERMITTIVITY AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE THIN FILM HAVING HIGH PERMITTIVITY

摘要

PROBLEM TO BE SOLVED: To provide a method of forming a thin film having a high permittivity with superior electric characteristics which can control and suppress the growth of an interfacial reaction layer during forming the thin film having a high permittivity and in each process after the formation of the thin film, and also to provide a method of manufacturing a semiconductor device using the thin film having a high permittivity.;SOLUTION: In a process of forming the thin film having a high permittivity or in processes after the film formation, a partial pressure of residual hydrogen and a partial pressure of residual water in the atmosphere are set to predetermined values or below. Thereby, a quantity of hydrogen supplied to the interface between the thin film having a high permittivity and a silicon substrate from a vapor phase through the thin film having a high permittivity is reduced to control the thickness of the interfacial reaction film formed in the interface between the thin film having a high permittivity and the silicon substrate to the atomic layer level, increasing the thickness of the thin film having a high permittivity such as ZrO2 used as a gate insulation film and thereby reducing a tunnel current in a gate layer.;COPYRIGHT: (C)2002,JPO