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首页> 外文期刊>Journal of the Physical Society of Japan >Field-Induced Superconductivity in Electric Double Layer Transistors
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Field-Induced Superconductivity in Electric Double Layer Transistors

机译:双电层晶体管中的场感应超导

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摘要

Electric field tuning of superconductivity has been a long-standing issue in solid state physics since the invention of the field-effect transistor (FET) in 1960. Owing to limited available carrier density in conventional FET devices, electricfield-induced superconductivity was believed to be possible in principle but impossible in practice. However, in the past several years, this limitation has been overcome by the introduction of an electrochemical concept, and electric-fieldinduced superconductivity has been realized. In the electric double layer (EDL) formed at the electrochemical interfaces, an extremely high electric field is generated and hence high-density charge carriers sufficient to induce superconductivity exist and are collectively used as a charge accumulation device known as an EDL capacitor. Field-induced superconductivity has been used to establish the relationship between T_c and carrier density and can now be used to search for new superconductors. Here, we review electric-field-induced superconductivity using an FET device, with a particular focus on the latest advances in EDL transistors.
机译:自1960年场效应晶体管(FET)发明以来,超导性的电场调谐一直是固态物理学中长期存在的问题。由于常规FET器件中有限的可用载流子密度,人们认为电场诱导的超导性是原则上可行,但实际上却不可能。然而,在过去的几年中,通过引入电化学概念已经克服了该限制,并且已经实现了电场感应的超导性。在形成于电化学界面处的双电层(EDL)中,产生极高的电场,因此存在足以诱发超导性的高密度电荷载流子,并被共同用作被称为EDL电容器的电荷累积装置。场感应超导已用于建立T_c和载流子密度之间的关系,现在可用于寻找新的超导体。在这里,我们回顾使用FET器件的电场感应超导性,特别关注EDL晶体管的最新进展。

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