Electronic State of CeFe_4As_(12) Investigated by Using Single Crystals Grown under High Pressure of 4 GPa

摘要

The electronic transport, magnetic, and specific heat measurements on CeFe_4As_(12) single crystals grown under high pressure of ~4 GPa have been performed, in order to clarify the reported contradictory results on the electronic state between the single crystals grown under minute pressure of ~4 MPa and polycrystalline samples synthesized under high pressure (~4 GPa). Special emphasis was put on the huge sample dependent physical properties reported in the former, which was attributed to huge sample dependent lattice constant and morphology of grown single crystals. We found similar sample-dependent electronic transport properties also in our high pressure grown single crystals with little sample dependence of the lattice constant, suggesting that neither the lattice constant nor morphology has direct connection with the electronic properties in CeFe_4A_(12). Based on these facts, the reason for such a sensitive sampledependent electronic transport properties of CeFe_4As_(12) is discussed, in correlation with the marginal Kondosemiconducting ground state of this material.