Preparation and Electronic Properties of MoS(2) and WS(2) Single Crystals Grown in the Presence of Cobalt

摘要

Single crystals of MoS(2) and WS(2) were grown by chemical vapor transport both in the presence and absence of cobalt. Hall measurements indicate that cobalt cannot diffuse appreciably into the bulk of MoS(2) or WS(2) and, therefore, can be present only on the surface. Similar results were obtained for as-grown crystals annealed or sulfided in contact with Co(9)S(8) or sulfided after being dipped in a 0.1M CoS0(4)/methanol solution. (Author)