Ferroelectric and Piezoelectric Properties of Bi_4Ti_3O_(12) Single Crystals Grown by Top-Seeded Solution Growth Method at High Oxygen Pressure

摘要

High-performance single crystals of ferroelectric Bi_4Ti_3O_(12) (BiT) have been successfully obtained via the top-seeded solution growth under high oxygen pressure (Po_2) atmosphere. Crystals grown at 960°C at a Po_2 of 0.9 MPa exhibited a well-saturated hysteresis loop with a remanent polarization of 48 μC/cm~2 and a coercive field of 29 kV/cm. The results of piezoresponse force microscopy indicate that polarization switching is accomplished throughout the BiT crystals obtained. Electric-field-induced strain measurements along the a axis yield a piezoelectric constant d_(11)~*of 37pm/V for BiT.